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• The Gas Phase Oxidation of Silyl Radicals by Molecular Oxygen: Kinetics and Mechanisms

T. Köcher, C. Kerst, G. Friedrichs, and F. Temps
in: Silicon Chemistry - From the Atom to Extended Systems , eds. P. Jutzi and U. Schubert, Wiley-VCH, 2003, ISBN: 3-527-30647-1

 

Silane, SiH4, and disilane, Si2H6, are among the most common precursors for chemical vapor deposition (CVD) processes, which have been found widespread application for the production of Si, Si:H, or SiO2 thin films for microelectronic and photovoltaic devices, the synthesis of Si-containing nanoparticles, or the protection of metal surfaces by inert layers. The deposition processes can be initiated by electric discharges in plasma sources, pyrolysis, or photochemically by laser induced reactions. the final products are usually formed through very rich reaction sequences. Many elementary reaction steps are involved in the gas phase (free radical reactions, ion-molecule reactions), at the gas-surface interface (adsorption, desorption), and on the surface (surface decomposition, hopping, lattice growth, annealing). Great interest arises in the development of detailed reaction mechanisms and kinetic models which can be used to describe the overall processes based on quantitative experimental data for the important elementary reactions.....

 

Zuletzt aktualisiert am Donnerstag, den 17. Juni 2010 um 10:58 Uhr
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